RUMORED BUZZ ON GERMANIUM

≤ 0.15) is epitaxially developed on the SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which the construction is cycled by oxidizing and annealing levels. Due to the preferential oxidation of Si above Ge [sixty eight], the initial Si1–s in biaxially compressive strained QWs from Shubnikov-de Haas or cyclotron resona